Used 600V 100A G60N100 Insulated

G60N100 IGBT: A Powerful and Veatile Solution

The G60N100 IGBT (Insulated Gate Bipolar Transistor) is a high-performance power semiconductor designed to meet the demands of modern power electronics applications. With its fast switching speed, high current capacity, and low on-state voltage, the G60N100 is an ideal choice for a wide range of applications, including:



Motor control

Power supplies

Inverte

Solar power systems

Uninterruptible power supplies (UPS)



Key Benefits of the G60N100 IGBT



Fast switching speed for efficient power conveion

High current capacity to handle demanding loads

Low on-state voltage for reduced power losses

Rugged construction for reliability and durability

Wide operating temperature range for veatile applications



Technical Specifications







Parameter

Value





Collector-Emitter Voltage (VCE(sus))

600 V





Collector Current (IC)

100 A





Collector-Emitter Saturation Voltage (VCE(sat))

1.8 V (typ)





Input-Output Capacitance (Ciss)

1500 pF





Junction Temperature (Tj)

-40°C to +150°C







Package Includes



1 x G60N100 IGBT Transistor