75A 650V Semiconductor 75T65Sqdt Igbt

75A 650V ON Semiconductor 75T65SQDT IGBT with Soft Fast Recovery Diode-
Product Description:

The 75T65SQDT is a 650V, 75A N-channel Field-Stop Trench IGBT from ON Semiconductor. It features an integrated soft, fast-recovery diode for efficient revee current handling, making it ideal for hard-switching applications such as welding inverte, motor drives, UPS systems, and solar inverte.
Designed for high performance, this IGBT delive low conduction loss, fast switching times, and excellent ruggedness. The TO-247 package ensures superior thermal performance and easy mounting on heatsinks for high-power systems.

⚙️ Key Specifications:

Parameter
Value

Collector–Emitter Voltage (V_CES)
650 V

Continuous Collector Current (I_C)
75 A @ 100°C

Pulsed Collector Current (I_CM)
~150–200 A

Saturation Voltage (V_CE(sat))
~1.65–1.75 V @ 75 A

Gate–Emitter Voltage (V_GE)
±20 V max

Total Gate Charge (Q_g)
~280–350 nC

Turn-on / Turn-off Delay Times
~50–100 ns typical

Junction Temperature Range (T_j)
–55°C to +175°C

Package Type
TO‑247 (3-lead)

Built-in Diode
Soft fast recovery

✅ Features & Benefits:

High current rating of 75A for demanding power circuits

Low V_CE(sat) reduces conduction losses

Fast switching with low tail current

Integrated fast diode supports bidirectional applications

TO-247 package ensures thermal stability and ease of mounting

Field-Stop Trench technology for ruggedness and efficiency

Applications:

Welding inverte

Solar string inverte

UPS (Uninterruptible Power Supply)

Motor drives and industrial automation

EV charging and battery management systems