11.1v 1000mah 18650 Li-ion Battery Pack

This Insulated Gate Bipolar Transistor (IGBT) is co-packaged with a soft recovery ultra-fast rectifier and use s an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit withstand time such as Motor Control Drives. Fast switching characteristics of IGBT MOSFET result in inefficient operations at high frequencies.Co–packaged IGBT’s save space, reduce assembly time and cost.



Features And Specifications Of MGW20N60D IGBT MOSFET Power Transistor:





Type Designator: MGW20N60D

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 142W

Maximum Collector-Emitter Voltage |Vce|, V: 600V

Collector-Emitter saturation Voltage |Vcesat|, V: 2.3V

Maximum Gate-Emitter Voltage |Veg|, V: 20V

Maximum Collector Current |Ic|, A: 20A

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 59

Maximum Collector Capacity (Cc), pF: 2280pF

High Short Circuit Capability

Soft Recovery Free Wheeling Diode is included in the package





MGW20N60D DataSheet



Package Include:





1 x MGW20N60D IGBT IC





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