This N-Channel enhancement mode power field effect transisto are produced using Winsemi’s proprietary, planar stripe ,DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switch mode power supplies.

Type

Power MOSFET

Number of Elements

1

Polarity

N

Channel Mode

Enhancement

Drain-Source On-Res

1.4Ohm

Drain-Source On-Volt

900V

Gate-Source Voltage (Max)

±30V

Continuous Drain Current

9A

Power Dissipation

150W

Operating Temp Range

-55C to 150C

Operating Temperature Classification

Military

Mounting

Through Hole

Pin Count

3 +Tab

Package Type

TO-3PN

Packaging

Tape and Reel

Package Include:

1xK2611

Datasheet PDF Download :